高灵敏度AlGaN/GaN HEMT生物传感器设计及制作  

Design and Fabrication of High Sensitivity AlGaN/GaN HEMT Biosensors

作　　者：薛伟[1,2] 李加东[1] 谢杰[1] 吴东岷[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所国际实验室,江苏苏州215123 [2]中国科学院研究生院,北京100039

出　　处：《微纳电子技术》2012年第7期425-432,共8页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61104226);国家重点基础研究发展计划(973计划)资助项目(2010CB934700)

摘　　要：目前AlGaN/GaN高电子迁移率晶体管(HEMT)生物传感器表面修饰及分子识别元件固定需在金属或氧化物门电极上进行,针对金属或氧化物门电极的存在增加了器件的制作难度,提高了制作成本,同时还影响了传感器灵敏度的提高等问题,提出了进行"生物分子膜"门电极的研究。传感器的表面采用3-氨基丙基三乙氧基硅烷(APTES)进行修饰作为分子识别元件固定的基底,该方法在降低传感器的制作成本的同时,提高了传感器的灵敏度,传感区域为长度L=5μm、宽度W=160μm的传感器测量质量浓度为0.1ng/mL的山羊免疫球蛋白(IgG)时,传感器源漏间电流呈现约30μA的电流降。该传感器反应速度快,适用于实时监测,在环境监控、医疗等领域有着良好的应用前景。Currently,the surface modification and molecular recognition component fixation of AlGaN/GaN high-electron-mobility transistor（HEMT） biosensors should be carried out on the metal or oxide gate electrodes.In order to solve the problems including the increase of fabrication difficulty and production cost,and the reduction of the sensitivity of the sensor due to the exis-tence of metal or oxide gate electrodes,the biomolecule-gate was studied,the surface of sensors was modified by APTES as the substrate of the molecular recognition component fixation.The method reduces the production cost and improves the sensitivity of the sensor at the same time.When the goat IgG with the mass concentration of 0.1 ng/mL was tested by the sensor with the region of L=5 μm and W=160 μm,the drain-source current decreased about 30 μA.The sensor has high response speed,is suitable for the real-time monitoring,and has a good application prospect in the fields of the environment monitoring and medicine.

关 键 词：高电子迁移率晶体管(HEMT) 生物传感器 生物分子膜门电极 灵敏度 山羊免疫球蛋白 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN386.3[自动化与计算机技术—控制科学与工程]