PTCDA/p-Si异质结势垒的形成及电流传输机理分析  

THE FORMATION OF PTCDA/p-Si HETEROJUNCTION BARRIER POTENTIAL AND THE ANALYSIS OF TRANSMISSION MECHANISM FOR ITS ELECTRIC CURRENT

作　　者：张福甲[1] 王德明[1] 

机构地区：[1]兰州大学物理系,甘肃兰州730000

出　　处：《甘肃科学学报》2000年第1期1-5,共5页Journal of Gansu Sciences

基　　金：国家自然科学基金资助项目!(编号 6 96 76 0 10 )

摘　　要：根据有机半导体材料 PTCDA与无机半导体 p型 Si能够形成同型异质结PTCDA/p- Si,分析讨论了它在正、反向偏压作用下的能带结构及其电流～电压特性。Based on organic semiconductor material and the inorganic semiconductor p \|type Si has been able to forming the homotype heterojunctcon PTCDA/ p \|Si,has been a analyses and discussion on the structure of energy band and the characteristic current^voltage by the action of the forward and inverse voltage.

关 键 词：PTCDA 异质结 电流输运 能带结构 有机半导体 硅 

分 类 号：O471.5[理学—半导体物理] TN304.504[理学—物理]