等离子喷涂制备压电石英膜材料及性能分析  

Preparation of piezoelectric quartz film material by plasma spraying and its performance analysis

作　　者：张剑[1] 陈文革[1] 王艳丽[1] 赵姗姗[1] 卓磊[1] 

机构地区：[1]西安理工大学材料科学与工程学院,陕西西安710048

出　　处：《兵器材料科学与工程》2012年第4期53-57,共5页Ordnance Material Science and Engineering

基　　金：西安市科技计划项目(CXY1124(1))

摘　　要：采用大气等离子喷涂技术制备SiO2膜压电材料,利用XRD和SEM研究其组织结构,同时对其介电常数ε、介电损耗tanδ、压电常数d33、机械品质因数Q等性能进行测试。结果表明:采用大气等离子喷涂工艺可制备出相结构主要由α-石英和α-方石英共同组成组织较为致密、缺陷较多的SiO2压电膜,压电常数d33和介电常数εr随膜厚度的增加而增加,介电损耗tanδ随膜厚度的增加而减小;介电常数εr、介电损耗tanδ、机械品质因数Q随频率的增加而减小,当SiO2膜厚为5mm,压电常数d33最大值为2.3 pC/N。SiO2 films were successfully prepared by plasma spraying technique. The microstructure and properties of thick films were studied by scanning electron microscope （SEM） and X-ray diffraction （XRD）. The results show that the phase structure of SiO2piezoelectric thick film are mainly composed of α-quartz and α-cristobalite. But the prepared SiO2 piezoelectric thick film is characterized by larger pores, the larger defect density and low density. Piezoelectric constant d33 and dielectric constant εr increases with SiO2 film thickness, dielectric loss tanδ decreases with SiO2 film thickness. Dielectric constant δr and dielectric loss tanδ and mechanical quaility factor Q increases with the increase of frequency. When the thickness of SiO2 film is 5 mm, the maximum piezoelectric constant d33 reaches 2.3 pC/N.

关 键 词：等离子喷涂 SIO2膜 压电材料 压电性能 

分 类 号：TQ17[化学工程—硅酸盐工业]