半导体制冷热端散热强度的研究  

Research on Hot-side Radiation Intensity of Semiconductor Refrigeration

作　　者：庞云凤[1] 王莹[1] 朱娇颖[1] 

机构地区：[1]哈尔滨商业大学能源与建筑工程学院,哈尔滨150028

出　　处：《冷藏技术》2012年第2期10-14,共5页Journal of Refrigeration Technology

摘　　要：影响半导体制冷性能的一个重要因素为半导体热端散热强度。针对这一问题本文首先选取了风冷散热、热管散热以及水冷散热三种散热方式进行了实验研究，得出水冷散热方式下制冷效果最佳的结论。其次，在最佳散热方式即水冷散热方式下，通过改变热端散热水流量从而改变散热强度的方法，选取6组热端散热水流量，进行半导体热端散热强度的实验研究，得出热端散热强度对半导体制冷性能的影响规律。The hot-side radiation intensity is an important factor of the semiconductor refrigeration performance. This article first selected three radiation ways： the air-cooled radiation, the heat pipe radiation as well as the water-cooled radiation, and then conducted the experimental study to the three radiation ways, obtaining conclusion that the effect of refrigeration was the best under the water-cooled radiation. Then under the best radiation, the water-cooled radiation, it conducted experimental study of the radiation intensity, changing the radiation intensity by changing the hot end water flow, and selected six groups of radiation intensities to carry on the experiment, and discovered the influence rule of hot- side radiation intensity to the performance of semiconductor refrigeration. Finally it preliminarily designed the small semiconductor refrigeration box, selecting the water-cooled radiation under most superior state.

关 键 词：半导体制冷 制冷性能 热端散热强度 水冷散热 

分 类 号：TB66[一般工业技术—制冷工程]