A different approach for determining the responsivity of n^+p detectors using scanning electron microscopy  

作　　者：Omeime Xerviar Esebamen Gran Thungstrm Hans-Erik Nilsson 

机构地区：[1]Department of Information Technology and Media,Mid Sweden University,Holmgatan 10,SE-851 70,Sundsvall,Sweden

出　　处：《Journal of Semiconductors》2012年第7期29-33,共5页半导体学报（英文版）

摘　　要：This paper explores an alternative to the standard method of studying the responsivities （the input-output gain） and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n＋p detectors; its purpose is to provide an alternative characterization method （using scanning electron microscopy） to those used in previous studies on the responsivity ofn＋p doped detectors as a function of the electron radiation energy and other interface oarameters.This paper explores an alternative to the standard method of studying the responsivities （the input-output gain） and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n＋p detectors; its purpose is to provide an alternative characterization method （using scanning electron microscopy） to those used in previous studies on the responsivity ofn＋p doped detectors as a function of the electron radiation energy and other interface oarameters.

关 键 词：scanning electron microscopy RESPONSIVITY n＋p detector 

分 类 号：TN36[电子电信—物理电子学]