Giant magnetoresistance in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes  

作　　者：卢建夺 徐宾 

机构地区：[1]Hubei Province Key Laboratory of Systems Science in Metallurgical Process,Wuhan University of Science and Technology [2]Department of Mathematics and Information Sciences,North China Institute of Water Conservancy and Hydroelectric Power

出　　处：《Journal of Semiconductors》2012年第7期51-55,共5页半导体学报（英文版）

基　　金：supported by Hubei Province Key Laboratory of Systems Science in Metallurgical Process,Wuhan University of Science and Technology(No.C201018)

摘　　要：In this paper, by using the transfer matrix method, we theoretically investigate the magnetoresistance （MR） effect in a two-dimensional electron gas （2DEG） modulated by two Schottky metal （SM） stripes and two ferromagnetic （FM） stripes on the top and bottom of the 2DEG. From the numerical results, we find that a considerable MR effect can be achieved in this device due to the significant difference between electron transmissions through the parallel and antiparallel magnetization configurations. We also find that the MR ratio obviously depends on the magnetic strength and the electric-barrier height as well as the distance between the FM and SM stripes. These characters are very helpful for making the new type of MR devices according to their practical applications.In this paper, by using the transfer matrix method, we theoretically investigate the magnetoresistance （MR） effect in a two-dimensional electron gas （2DEG） modulated by two Schottky metal （SM） stripes and two ferromagnetic （FM） stripes on the top and bottom of the 2DEG. From the numerical results, we find that a considerable MR effect can be achieved in this device due to the significant difference between electron transmissions through the parallel and antiparallel magnetization configurations. We also find that the MR ratio obviously depends on the magnetic strength and the electric-barrier height as well as the distance between the FM and SM stripes. These characters are very helpful for making the new type of MR devices according to their practical applications.

关 键 词：magnetic nanostructure magnetoresistance effect magnetoresistance ratio 

分 类 号：TN303[电子电信—物理电子学]