纯Ag内电极高性能多层片式压敏电阻器的研制  

Study on the Multilayer Chip Varistor of Pure Silver as Inner Electrode

作　　者：唐斌 陈加旺 岑权进 陈加增 

机构地区：[1]广东风华高新科技股份有限公司,肇庆526020

出　　处：《现代技术陶瓷》2012年第2期15-17,共3页Advanced Ceramics

摘　　要：通过采用独特的Zn-Bi-Sb-Si-Ti配方体系,并在此配方体系中加入稀土材料Er2O3,可实现瓷体材料在950℃以下烧结;同时通过采用850℃的银浆作为内电极,按常规的片式压敏生产工艺,可生产出纯Ag内电极高性能多层片式压敏电阻器。其压敏电压为39V,非线性系数为30以上,泄漏电流2μA以下,做成0805尺寸的器件,其峰值电流(8/20μS)可达100A,能量耐量(10/1000μS)可达0.3J。The ceramic Material, Which has a unique Zn - Bi - Si - Ti formula system, and rare earth material Er2O3 as additives can be sintered at 950℃ for the following. Muhilayer chip varistor of pure silver as inner electrode was obtained by using the silver paste of 850℃ as internal electrode and the conventional chip varistor process. Obtained products have following advantages：varistor voltage （39V）, nonlinear coefficent （ 〉 30） ,leakage current（ 〈 21xA）. the devices of 0805 size have a peak current（ 8/20μS, 〉 100A）, and a energy tolerance（10/1000μS, 〉0.3J）.

关 键 词：纯Ag内电极 高性能 多层片式压敏电阻器 液相烧结 

分 类 号：TM54[电气工程—电器]