CoFeB/Pt反常霍尔效应标度关系的研究  

Scaling law of the anomalous Hall effect in CoFeB/Pt

作　　者：吴少兵[1,2] 陈实[2] 杨晓非[2] 朱涛[1] 

机构地区：[1]中国科学院物理研究所,北京100190 [2]华中科技大学电子科学与技术系,武汉430074

出　　处：《中国科学：物理学、力学、天文学》2012年第7期705-710,共6页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家自然科学基金资助项目(批准号:50871120;11079052;11174354;60871018)

摘　　要：本文研究了磁控溅射法制备的CoFeB/Pt薄膜的反常霍尔效应.通过测量不同温度下(5-300K)的反常霍尔效应,系统研究了反常霍尔效应的标度关系,发现反常霍尔系数RS与纵向电阻率ρxx之间的关系满足RS=aρxx+bρ2xx,当CoFeB较薄时,Skew-Scattering机制对反常霍尔效应的贡献占主导地位,随者CoFeB厚度的增加,反常霍尔效应的物理机制过渡为SideJump机制.We have investigated the anomalous Hall effect in the sputtered CoFeB/Pt films. It is found that the anomalous Hall coefficient Rs and the longitudinal resistivity Pxx in the CoFeB/Pt films obey the scaling relation of Rs=apxx＋bp2xx. The results show that the skew-scattering mechanism dominates the anomalous Hall effect when the CoFeB thickness is less than its mean free path, whereas, the side jump mechanism dominates the anomalous Hall effect when the CoFeB thickness of CoFeB layer is much larger than its mean free path.

关 键 词：反常霍尔效应 标度关系 自旋轨道耦合 

分 类 号：O482[理学—固体物理]