AAO模板对交流电沉积金属Ni的影响  

The AAO Preparation Technology Influence on AC Electrochemical Deposition of Ni Nanowire

作　　者：邢晓云[1] 彭智[1] 陈丽娜[1] 宋国君[1] 

机构地区：[1]青岛大学化学化工与环境学院,山东青岛266071

出　　处：《科技视界》2012年第18期48-50,共3页Science & Technology Vision

基　　金：山东省自然科学基金(Y2008B05);青岛市科技计划项目(08-1-3-39-jch)

摘　　要：采用二次阳极氧化的方法制备了孔径在70-110nm的阳极氧化铝模板(AAO),利用制备的模板交流电沉积金属Ni纳米线。二次氧化后逐级降低电压到0V,有效地减薄了阻挡层的厚度,阻挡层的厚度是影响电沉积效果的主要因素。利用扫描电镜及透射电镜表征发现,恒压40V制备的模板进行交流电沉积的Ni纳米线有序性好,直径均匀,与模板的孔径一致,效果最好。同时,实验中采用完整的正弦交流电信号沉积的纳米线不连续,且呈颗粒状聚集,而采用二极管整流后得到的纳米线连续,均匀。Highly ordered anodic aluminum oxide （AAO） pores were successfully fabricated on aluminum template using a two- step anodization method. The pore diameter of AAO was from 70nm to110nm. After the secondary anodic oxidation step, the anodic oxidation voltage decrescence step by step to 0 voltage, could effectively reduce the thickness of barrier layer. The thickness of barrier layer was one of the most important influencing factors. The characterization by SEM and TEM showed that the Ni nanowires fabricated by 40V AAO templates had a good order , uniformity and the same diameter with AAO. At the same time, Ni nanowire deposited by whole sinusoidal alternating current was not continuous, they aggregated by grains. The using of diode rectification could get continuous Ni nanowires.

关 键 词：阳极氧化铝模板 交流电沉积 NI纳米线 氧化电压 

分 类 号：TN16[电子电信—物理电子学]