偏置电场对THz辐射强度影响的蒙特卡罗模拟  

Monte Carlo simulation of the effect of bias electric field on intensity of THz radiation

作　　者：徐英[1,2] 洪治[1] 

机构地区：[1]中国计量学院太赫兹技术与应用研究所,浙江杭州310018 [2]浙江大学光及电磁波研究中心,浙江杭州310058

出　　处：《浙江大学学报（工学版）》2012年第5期899-904,共6页Journal of Zhejiang University：Engineering Science

基　　金：国家自然科学基金资助项目(60977066)

摘　　要：采用系综蒙特卡罗方法对光生载流子在偏置电场作用下的输运过程进行模拟,从微观角度研究偏置电场对连续太赫兹辐射强度的影响.模拟结果表明,由于空间电荷电场屏蔽效应以及散射等因素的影响,太赫兹辐射强度先是随偏置电场的增强而上升,当达到峰值后逐渐趋于饱和.虽然降低温度使粒子发生散射的几率降低,但同时也减小粒子的初始能量,故低偏置电场时低温下连续太赫兹辐射功率比常温下小,而当偏置电场超过某一阈值时,降低温度能够提高连续太赫兹辐射功率.To study the effect of bias electric field on the intensity of continuous-wave （CW） terahertz （THz） radiation from the microscopic view, ensemble Monte Carlo method was used to simulate the carriers transport processes under bias electric field. The simulation results show that, due to the effects of space charge screening and scattering, the intensity of CW THz radiation firstly increases as the bias electric field increases, and then saturates finally after reaching peak value. Although the possibility of carrier scattering drops as temperature reduces, the initial energy of photoexcited carrier decreases, so the power of CW THz radiation is lower at low temperature than at normal temperature when the bias electric field is low, but becomes higher when the bias electric field is above a certain threshold.

关 键 词：连续太赫兹辐射 偏置电场 蒙特卡罗模拟 光子混频 

分 类 号：O431.1[机械工程—光学工程]