EGSM/TD-LTE双模双连接手机近场电磁兼容的研究  

Research on near-field EMC in EGSM/TD-LTE dual-mode dual-link mobile phones

作　　者：江勇[1] 高安明[1] 彭宏利[1] 毛军发[1] 

机构地区：[1]上海交通大学电子信息与电气工程学院,上海200240

出　　处：《信息技术》2012年第6期1-4,7,共5页Information Technology

基　　金：国家自然科学基金支持项目(60821062)

摘　　要：针对EGSM/TD-LTE双模双连接手机,研究了手机近场的电磁兼容问题。首先构建了EGSM和TD-LTE两个模式的手机近场电磁兼容问题的评估模型;其次基于该评估模型研究了近场射频干扰与双模双连接手机接收性能的关系,当EGSM的发射功率为30dBm,TD-LTE系统的接收灵敏度会恶化2dB;最后给出了一种提高多频段双天线隔离度的解决方案,并通过仿真表明,该方法能够有效提高双模双连接手机的天线隔离度,从而克服双模双连接手机的电磁兼容问题。For EGSM / TD-LTE dual-mode dual-link cell phones, some research was completed on cell phone near-field electromagnetic compatibility （EMC）. First, the cell phone near-fleld EMC assessment model of EGSM and TD-LTE was build ; second the relationship between he near-field RF interference and dual-mode dual-link mobile reception performance was researched based on the assessment model, when the EGSM transmitter power is 30dBm, the sensitivity of TD-LTE system receiver will deteriorate by 2dB; finally, an improved multi-band dual-antenna isolation solution is given, and the simulation shows that the method can effectively improve the dual-mode dual-link cell phone antenna isolation, so the problem of dual-mode dual-link mobile phone EMC has been overcome.

关 键 词：双模双连接 电磁兼容 射频干扰 天线隔离 

分 类 号：TN916.9[电子电信—通信与信息系统]