变流器差模EMI的建模研究  

Model Research on Differential EMI of Converters

作　　者：袁义生[1] 闫勋[1] 

机构地区：[1]华东交通大学电气学院,江西南昌330013

出　　处：《华东交通大学学报》2012年第3期88-91,共4页Journal of East China Jiaotong University

基　　金：国家自然科学基金项目(51067004)

摘　　要：通过将功率MOSFET开关电压波形等效成干扰电压源,再考虑电感器分布电容建立差模干扰回路,从而提出了建立变流器差模干扰的模型电路的方法。在此基础上,分析了干扰源和干扰回路阻抗的频域特性。并考虑实际测试时LISN的影响,得到了干扰测试端的频域特性。对电感器不同寄生电容,干扰源特性等给差模干扰带来的影响进行了分析,得到了其频谱特性。最后,用一个实际的BOOST电路作为对象,比较了模型仿真和测试结果,证明了模型建立的有效性。Taking the switching voltage waveform of Power MOSFET as interference source, differential model （DM） interference loop model with inductor＇ s parasitic capacitor is established to propose the DM EMI model of converters. The impedance characteristics of disturbance source and disturbance loop are analyzed. Taking consideration of practical LISN in test, the tested disturbance character is obtained. In addition, the effect of parasitic capacitor of inductors and disturbance source are analyzed. Finally, a practical Boost converter is used to compare its simulation and experimental results, which proves availability of the model

关 键 词：变流器 差模干扰 建模 

分 类 号：TM46[电气工程—电器]