致冷型红外CMOS读出集成电路的发展现状  

Status of CMOS ROIC for Cooled IRFPA

作　　者：刘成康[1] 李兵[1] 汪涛[1] 袁祥辉[1] 

机构地区：[1]重庆大学光电工程学院,重庆400044

出　　处：《红外技术》2000年第4期39-41,46,共4页Infrared Technology

摘　　要：致冷型红外读出集成电路经历了 2 0多年的发展 ,其技术已日臻完善 ,CMOS读出电路是当今读出电路的主流 ,其发展趋势是减小像元间距 ,增加焦平面阵列像元数而又不降低其光电性能。将滤波电路、A D转换等功能器件集成在同一芯片上也是读出电路的发展方向。The technology of IRFPA ROIC has been developed for more tham twenty years and is becoming maturer .Now, as a main IRFPA ROIC, andCMOS IR ROIC is going to decrease the pitch and increase the number of detectors without degrading the electro optical performances.IRFPA ROIC with some functional devices,such as. A/D conversion,filter and so on,are being developed.

关 键 词：红外焦平面阵列 读出电路 CMOS 集成电路 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN215