Sn掺杂对Zn_4Sb_3热电输运性能的影响研究  

Thermoelectric properties of Sn-doped Zn_4Sb_3 system

作　　者：刘峰[1] 章其林[1] 

机构地区：[1]安徽工程大学,安徽芜湖241000

出　　处：《铜陵学院学报》2012年第3期98-100,共3页Journal of Tongling University

基　　金：安徽省自然科学基金项目(编号1208085QA16);安徽省高校省级自然科学研究项目(编号:KJ2010B024);安徽工程大学引进人才启动基金项目(编号:2008YQ006)研究成果

摘　　要：在5-310K温度范围内,研究了Sn替代对化合物(Zn1-xSnx)4Sb3的低温热电性能的影响。研究结果表明相对于无掺杂的Zn4Sb3,(Zn1-xSnx)4Sb3(x≠0)的低温热导率明显降低,并且随着Sn掺杂含量的增加而不断降低。实验结果也发现,掺杂Sn后化合物的直流电阻率和热电势都减小,且随着Sn掺杂量的增加而不断减小。In this paper, the effects of Sn substitution of Zn on thermoelectric properties of （Zn1-xSnx）4Sb3 were studied at the temperatures from 5K to 310IC The results showed that low-temperature thermal conductivity of the doped β-（Zn1-xSnx）4Sb3 （x≠0） reduced remarkably as compared to that of Zn4Sb3, and decreased monotonously with increasing Sn content x. Meanwhile, DC electrical resistivity and thermopower of the doped compounds became smaller than that of un-doped Zn4Sb3, and decreased monotonously with increasing Sn content x.

关 键 词：Zn4Sb3 热电势 热导率 热电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]