高频条件下IGBT驱动电路的设计与仿嘉  

Design and Simulation of Drive Circuit for IGBT Under High-Freqency

作　　者：黄星星[1] 蒋友成 

机构地区：[1]东南大学电气工程学院,江苏南京210096 [2]江苏爱克赛电气制造有限公司江苏扬州225131

出　　处：《变频技术应用》2012年第4期66-68,共3页INVERTER TECHNOLOGIES AND APPLICATIONS

摘　　要：对大功率IGBT（Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管）的开关特性、驱动要求进行了分析和讨论，介绍了一种高频条件下实用的IGBT驱动电路，并通过理论分析和仿真波形说明该驱动电路的有效性和适用性。The switch characteritics, drive requirements of IGBT are analyzed and discussed. A simple and fimctional driving circuit for high power IGBT under high-freqency condition is also introduced. After theoretical analysis,the circuit simulation proves the effectiveness and applicability of the drive circuit

关 键 词：高频 绝缘门极双极型晶体管 驱动电路 

分 类 号：TN761[电子电信—电路与系统]