用KrF准分子脉冲激光在低基板温度下制备AlN薄膜的研究  

Study on Deposition of AlN Thin Films at Low Substrate Temperature with KrF Excimer Pulsed Laser

作　　者：赵强[1] 范正修[1] WANGMingli Kyung-KuYOON Jae-GuKIM Seong-KukLEE Kyung-HyunWHANG 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800 [2]KoreaInstituteofMachinery&Materials

出　　处：《功能材料》2000年第B05期101-102,共2页Journal of Functional Materials

摘　　要：用KrF准分子脉冲激光在 2 0 0℃的Si(111)基板上通过改变制备条件 ,采用沉积后直接保温处理的方式制备出了具有不同择优取向的AlN薄膜 ,并得出了较高的处理温度和过长的时间不利于AlN相的形成的结论。AlN thin films with dominant crystalline structure were prepared on Si(111) substrate at low temperature (200℃) with a KrF excimer pulsed laser by varying the deposition conditions.And the forming of AlN phases were precluded by the long time and high temperature in heat treatment after the deposition.

关 键 词：准分子脉冲激光 激光沉积 ALN薄膜 

分 类 号：TQ174.758[化学工程—陶瓷工业]