非晶硅太阳电池背接触界面和n型层参数敏感性研究  

Sensitivity Study of Back Contact Interface and n-Layer Parameters for Amorphous Silicon Solar Cells

作　　者：剡文杰[1] 赵红生[1] 田燕[1] 徐恩华[1] 

机构地区：[1]宁夏大学 物理电气信息学院,宁夏银川750021

出　　处：《宁夏大学学报（自然科学版）》2012年第2期171-175,共5页Journal of Ningxia University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(61066002;11064009);宁夏自然科学基金资助项目(NZ0821)

摘　　要：在参照国内外大量实验测量数据的基础上,建立了pin结构非晶硅太阳电池的计算模型.通过一系列模拟计算和分析,研究了电池3个外部特性和能量转换效率对背接触界面和n型层参数的敏感性.结果表明,背接触势垒高度和n型层掺杂浓度是对电池外部特性参数有显著影响的敏感参数;背面反射率只对短路电流和转换效率的改善有贡献且最大增幅均小于10%;背接触界面载流子表面复合速率和n型层的厚度、迁移率隙、载流子迁移率等参数对电池各外部特性的影响均很小.根据对计算结果的分析,提出了背接触界面和n型层参数的一组优化值,并指出背接触势垒高度和n型层掺杂浓度应作为理论和工艺研究重点.A computational model is established for amorphous silicon solar cells based on measurements. A series of simulations has been carried out in order to investigate the sensitivity of three external characteristics and energy conversion efficiency of solar cell to the back contact interface and n-layer parameters. The results show that back contact barrier height and n-layer doping concentration are two sensitive parameters which significantly affect solar cell performance; reflection coefficient on back contact surface contribute only to short current and efficiency, and the rate of increase is less than 10~ whileas the carrier surface combination speed at the back contact interface, the width, mobility gap and carriers mobility of n-layer affect cell performance very. weekly. According to the results, a optimal parameters set of n-layer and back contact interface is presented, further research on n-layer and back contact interface should focus on back contact barrier height and n-layer doping concentration.

关 键 词：非晶硅 太阳电池 背接触界面 敏感性 数值模拟 

分 类 号：TM914.4[电气工程—电力电子与电力传动]