功率谱密度分析在IGBT模块缺陷诊断中的应用  

Application of PSD Analysis in Defect Diagnosis of IGBT Module

作　　者：周生奇[1] 周雒维[1] 孙鹏菊[1] 吴军科[1] 

机构地区：[1]重庆大学,输配电装备及系统安全与新技术国家重点实验室,重庆400044

出　　处：《电力电子技术》2012年第7期49-51,共3页Power Electronics

基　　金：国家自然科学基金项目(51077137);国际科技合作计划资助(2010DFA72250)~~

摘　　要：目前,绝缘栅双极晶体管(IGBT)模块逐渐成为电力电子装置中的主导器件,及早发现其内部缺陷,是避免突发故障的关键举措之一,对增强电力电子装置运行可靠性具有重要意义。为此,提出一种基于门极充电初始阶段电压信号功率谱密度分析的IGBT模块内部缺陷识别方法。该方法建立在IGBT模块运行过程中因经受电、热应力累积而导致门极寄生参数变化的基础上,通过分析门极电压信号功率谱密度的变化,来判断模块内部是否存在缺陷。实验结果验证了其诊断结论的正确性和实用性。At present insulated gate bipolar transistors （IGBTs） are the key devices used in power electronic equipment.Detecting the internal defects of IGBTs is an important measure to enhance the reliability of power electronic equipment.For this purpose, a novel prognostic method for internal defects of IGBTs based on power spectral density of gate voltage during the beginning of charging process is presented.This method is based on variations of stray parameters inside IGBTs conducted by electrical and thermal stress, and then identifies the internal defects of IGBTs by analyzing the change of power spectrum density of gate voltage.The correctness and application value are verified.

关 键 词：绝缘栅双极晶体管 缺陷诊断 功率谱密度 

分 类 号：TN32[电子电信—物理电子学]