10.6μm激光对HgCdTe焦平面器件热应力的分析  

Theoretical analysis of thermal-stress effect of HgCdTe infrared focal plane device induced by 10.6 μm laser

作　　者：郝向南[1] 聂劲松[1] 李化[1] 卞进田[1] 雷鹏[1] 

机构地区：[1]脉冲功率激光技术国家重点实验室(电子工程学院),安徽合肥230037

出　　处：《激光与红外》2012年第7期790-794,共5页Laser & Infrared

基　　金：国家"973"计划项目资助

摘　　要：建立了HgCdTe红外焦平面器件的多膜层理论模型,利用有限元分析的方法,对10.6μm激光辐照下HgCdTe红外焦平面器件的升温情况与热应力分布情况进行模拟,并通过参考已有文献的实验结果,验证了理论模型的合理性。理论分析结果表明:激光作用时探测器的温度场变化剧烈,200 W/cm2连续激光作用1 s后,HgCdTe感光层所受热应力为-986 MPa;脉宽100 ns,功率密度15 MW/cm2脉冲激光作用后,HgCdTe感光层所受热应力为-1300 MPa,都比器件制造过程中由于热失配而产生的热应力大;应力损伤发生的概率增大,可能比热损伤先发生,是HgCdTe红外焦平面器件激光损伤中的重要原因。Muti-layer theoretical Model of HgCdTe Infrared Focal Plane Device was established.With the method of finite element analysis,temperature field and thermal-stress field induced by 10.6 μm laser were simulated.By considering experiments carried out in other papers as reference,the rationality and feasibility of the muti-layer model are proved.Results of theoretical analysis indicates that the temperature field changes greatly when irradiated by laser.With CW laser of 200 W/cm^2 power density irradiating the sensor for 1 s,thermal-stress of HgCdTe photo-sensitive surface is-986MPa;With pulsed laser of 100 ns and 15 MW/cm^2 irradiating the sensor,thermal-stress of HgCdTe photo-sensitive surface is-1300 MPa.The thermal-stress mentioned above are both beyond that caused by thermal-mismatch in the production process.Besides,the probability of thermal-stress damage increases and may happen before thermal damage,which should be an important factor in the research of laser damage to HgCdTe Infrared Focal Plane Device.

关 键 词：HgCdTe红外焦平面器件 热失配效应 激光热应力作用 有限元分析 

分 类 号：TN249[电子电信—物理电子学] TN215