基于二维数值仿真技术的局部场氧化形状建模  

Model development for patterns generated by localized oxidations with bi-dimensional numerical stimulations

作　　者：陈晓敏[1] 

机构地区：[1]成都工业学院信息与计算科学系,四川成都610031

出　　处：《重庆邮电大学学报（自然科学版）》2012年第4期518-520,共3页Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

摘　　要：通过工艺仿真软件S-Tsuprem4对CMOS中常用的硅局部场氧化(local oxidation silicon,LOCOS)技术所生成的"鸟嘴"图形进行了仿真,提出了一种形状模型。随后利用最小二乘拟合法得到相对应的参数,拟合误差为7e-4,并最后以分段函数的方式给出了模型的表达式。该模型可以使"鸟嘴"结构更加方便应用于半导体器件的数值仿真和设计。In this study the ＂beak＂ patterns generated by localized oxidation technology （LOCOS） in CMOS were stimula- ted with process stimulation software S-Tsuprem4, and a simplified model was developed for the patterns. Further, critical parameters of the model were obtained through least-square-root regressions with an error of regression at 7e-4, which even- tually led to the establishment of the expression of the model in the form of multiple functions covering respective ranges. The model enables more feasible applications of the ＂beak＂ structure in the fields of numeric stimulation as well as design of semi-conductor parts.

关 键 词：工艺仿真 硅局部场氧化(LOCOS) 形状模型 最小二乘拟合 分段函数 

分 类 号：TP301.6[自动化与计算机技术—计算机系统结构]