Ar环境下脉冲激光烧蚀粒子阻尼系数的空间分布  

Spatial distribution of damping coefficient of ablated particles prepared by pulsed laser ablation in Ar gas

作　　者：王英龙[1] 胡自强[1] 邓泽超[1] 翟小林[1] 褚立志[1] 丁学成[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北省光电信息材料重点实验室,河北保定071002

出　　处：《强激光与粒子束》2012年第8期1965-1969,共5页High Power Laser and Particle Beams

基　　金：国家重点基础研究发展计划项目(2011CB612305);国家自然科学基金项目(10774036);河北省自然科学基金项目(E2011201134;E2012201035);河北大学自然科学基金项目(Y2007100)

摘　　要：在10 Pa的Ar环境气体中,采用脉冲激光烧蚀技术,分别在半径为2.0,2.5,3.0,3.5和4.0 cm的半圆环不同角度处的衬底上制备了一系列含有纳米晶粒的Si晶薄膜。使用扫描电子显微镜、X射线衍射仪和拉曼光谱仪对其表面形貌和微观结构进行分析表征。结果表明,纳米Si晶粒的平均尺寸和烧蚀粒子的阻尼系数均相对于羽辉轴向呈对称分布,并随着与羽辉轴向夹角的增大而减小;同时,随着衬底半径的增加,晶粒平均尺寸和阻尼系数均逐渐减小。The nanocrystalline silicon thin films were deposited on circular substrates with radiuses of 2.0 cm,2.5 cm,3.0 cm,3.5 cm and 4.0 cm by pulsed laser ablation in argon gas of 10 Pa at room temperature.The surface morphology and microscopic structure of the films were characterized by scanning electron microscopy,X-ray diffraction analysis and Raman spectroscopy.The results indicate that both the average size of Si nanoparticles and the damping coefficients of ablated particles are distributed symmetrically relative to the plume axis,and decrease with increasing the angle between substrate and plume axis.Meanwhile,the average size of Si nanoparticles and the damping coefficients of ablated particles decrease as the radius of circular substrate increases.

关 键 词：脉冲激光烧蚀 平均尺寸 烧蚀粒子 阻尼系数 空间分布 

分 类 号：O484.1[理学—固体物理]