改性含钪薄膜阴极的研究  

Study of Modified Scandia-Tungsten Coated Cathode

作　　者：王舒墨[1] 李季[1] 王辉[1] 

机构地区：[1]北京真空电子技术研究所,北京100015

出　　处：《真空电子技术》2012年第3期8-12,共5页Vacuum Electronics

摘　　要：采用Sc6WO12+W代替传统的Sc2WO3+W材料制备溅射靶,利用三极直流溅射方法制备含钪薄膜阴极。这种方法不需要在覆膜过程中通入氧气或采取其它的复杂氧化工艺,不仅简化了操作也提高了阴极制备的稳定性和一致性。本文研究了这种阴极的发射特性和功函数分布情况。这种阴极在1000℃时能提供86A/cm2的发射电流密度,表现出良好的发射性能。This paper presents a modified method to manufacture Scandia-tungsten coated dispenser cathode, which uses triode DC sputtering to deposit a Sc-containing film on traditional BaW dispenser cath- ode with Sc6WO12＋W target instead of Sc2O3 ＋W target. This method simplifies the operation of film de- positing and enhances the stability and consistency of coating Sc-type cathode for it needn＇t introduce oxy- gen or take other complicated oxidation techniques during the process of film depositing. We also study the emission property and work function of this cathode. It provides 86 A/cm2 current density at a cathode temperature of 1 000℃, which shows excellent emission capability.

关 键 词：Sc6WO12 钪 阴极 溅射 覆膜 

分 类 号：O462[理学—电子物理学]