基于TRL的3mm波段变容二极管对建模方法  

TRL-Based Modeling Method of Varactor Diodes for 3mm Millimeter-Wave Application

作　　者：安大伟[1] 于伟华[2] 吕昕[2] 

机构地区：[1]中国气象局国家卫星气象中心,北京100081 [2]北京理工大学信息与电子学院,北京100081

出　　处：《电子学报》2012年第6期1180-1184,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.41105009);国家"973"计划(No.2010CB327505)

摘　　要：本文在商用变容二极管的简化电路模型基础上,对非线性肖特基结和周围的无源结构进行了基于石英介质的TRL去嵌入建模分析,在考虑二极管无源区和封装环境各种寄生参量情况下,建立了精确的3mm波段二极管对电路模型.采用TRL算法,通过拟合初始二极管S参数曲线和TRL测试参数确定芯片电路模型中各集总参数元件数值.二极管对在片各项测试结果和基于改进的电路模型仿真结果相吻合.该二极管对电路模型建模方法可应用于毫米波亚毫米波混频倍频电路的准确分析与设计.Based on the simplified circuit model of the commercially available Varactor diode, TRL analysis on quartz is in troduced in this paper for the analysis of the passive parts of the diode chip. The diodes chip model in 3ram is setup by the analysis of all the parasitic parameters and working environment.By using TRL arithmetic,the values of lumped elements in the diode chip model are determined. The measured onwafer results agree well with simulated results of the diode chip. The methods of modified diodes chip model may find its applications in the design of millimeter circuits such as mixers and frequency multipliers.

关 键 词：GaAs变容二极管 芯片电路模型 不连续性 毫米波 

分 类 号：TN312.1[电子电信—物理电子学]