临界电流测量中的影响因素的研究  

STUDY ON THE FACTORS INFLUENCING THE CRITICAL CURRENT MEASUREMENT

作　　者：张月蘅[1] 徐政[1] 罗虹[2] 丁旗[2] 任聪[2] 吴希凡 邱里[2] 林风勇 丁世英[2] 

机构地区：[1]同济大学材料科学与工程学院,上海200092 [2]南京大学物理系国家固体微结构物理实验室,南京210093

出　　处：《低温物理学报》2000年第4期253-261,共9页Low Temperature Physical Letters

基　　金：国家超导研究发展中心!(课题号95-预-06.9705)

摘　　要：Electric transport measurement of Ag-sheathed Bi2 -xPhx.Sr2Ca2Cu3Oy, tapes in magnetic fields H was conducted by four-probe method to study the effect of H and sweeping rate of applied current dl/dt on critical current. It is found that critical current decreases with H and dl/dt and the effect of dl/dt on V-I characteristic curve changes with the increase of H. To understand the experimental result, numerical simulation was carried out based on the collective creep model of the vortex glass. It is shown that the influence of the applied field, temperature and voltex pinning on the normalized critical current can be reduced to a single critical current parameter n. The numerical result is in agreement qualitatively with the experiment.Electric transport measurement of Ag-sheathed Bi2 -xPhx.Sr2Ca2Cu3Oy, tapes in magnetic fields H was conducted by four-probe method to study the effect of H and sweeping rate of applied current dl/dt on critical current. It is found that critical current decreases with H and dl/dt and the effect of dl/dt on V-I characteristic curve changes with the increase of H. To understand the experimental result, numerical simulation was carried out based on the collective creep model of the vortex glass. It is shown that the influence of the applied field, temperature and voltex pinning on the normalized critical current can be reduced to a single critical current parameter n. The numerical result is in agreement qualitatively with the experiment.

关 键 词：临界电流 测量 超导材料 直流四引线法 

分 类 号：O511[理学—低温物理]