两步法制备的自旋阀巨磁电阻效应研究  

GIANT MAGNETORESISTANCE EFFECT IN SPIN VALVE MULTILAYERS BY TWO-STEP SPUTTER DEPOSITION

作　　者：卢正启[1] 柴春林[2] 赖武彦[1] 

机构地区：[1]中国科学院物理研究所,凝聚态物理中心和磁学国家重点实验室,北京100080 [2]北京科技大学应用科学学院,北京100083

出　　处：《物理学报》2000年第2期328-333,共6页Acta Physica Sinica

基　　金：中国科学院基金!(批准号 :KJ95 1 A1 40 1);国家自然科学基金!(批准号 :19890 3 10 )资助的课题

摘　　要：采用新的磁控溅射两步法沉积自旋阀多层膜,不仅交换耦合作用大大增强,而且可以提高磁电阻比值和降低层间耦合作用.得到磁电阻比值～26%,交换耦合场～28kA/m,层间耦合场～01kA/m.自旋阀的下部(缓冲层(Ta)/自由层(NiFe)/中间隔离层(Cu))在低氩气压下沉积、上部(被钉扎层(NiFe)/反铁磁钉扎层(FeMn)/覆盖层(Ta))则在高氩气压下沉积.前者保证了自旋阀具有强(111)晶体织构,平整的NiFe/Cu界面和致密的Cu层,抑制了层间耦合作用;后者则促进小尺寸磁畴生长和增加NiFe/FeMn间有效界面反铁磁交换耦合。Spin valve multilayers were prepared by a new two\|step magnetron sputtering procedure.It is found that the exchange coupling is strongly enhanced,the giant magnetoresistance (GMR) is improved,and the interlayer coupling is reduced.A GMR of 2.6%,an exchange coupling field of 28?kA/m and an interlayer coupling field of 0.1?kA/m were obtained.Lower layers (Ta/NiFe/Cu) were deposited at a lower argon pressure,while upper layers (NiFe/FeMn/Ta) were deposited at a higher argon pressure.The former promoted stronger (111) textures of NiFe,Cu,FeMn while maintaining smooth interface and dense Cu film,resulting in a reduction in interlayer coupling.The latter promoted the growth in a small magnetic domain size and an increase in the effective interfacial exchange coupling,resulting in a high exchange coupling field.

关 键 词：两步长 自旋阀 巨磁电阻效应 多层膜 

分 类 号：O484[理学—固体物理]