透射式GaAs光电阴极激活技术研究  

THE RESEARCH OF TRANSMISSIVE GaAs PHOTOCATHODE ACTIVE TECHNIQUE

作　　者：徐江涛[1] 

机构地区：[1]西安应用光学研究所,陕西西安710065

出　　处：《应用光学》2000年第4期5-7,15,共4页Journal of Applied Optics

摘　　要：通过对成像器件GaAs负电子亲合势 (NEA)光电阴极激活技术的研究 ,运用分析仪器进行工艺质量在线监测 ,在大、薄、匀的GaAs外延层激活出的台内阴极灵敏度大于 130 0 μA/lm。The sensitivity of in-mesa cathode activated on a large,thin and uniform GaAs epitaxial layer is up to better than 1300 μA/lm by the research of the active technique of GaAs NEA photocathodes for imaging devices and the on-line mornitoring of precess quality.

关 键 词：NEA光电阴极 激活 在红监测 砷化镓 微光管 

分 类 号：TN223[电子电信—物理电子学]