高场下界面势垒对双层有机器件复合发光的影响  

INFLUENCE OF INTERFACE BARRIERS ON CARRIERS RECOMBINATION IN ORGANIC BILAYER DEVICES AT HIGH ELECTRIC FIELD 

作　　者：杨盛谊[1] 王振家[1] 陈晓红[1] 侯延冰[1] 董金凤[1] 徐叙瑢[1] 

机构地区：[1]北方交通大学光电子技术研究所,北京100044

出　　处：《物理学报》2000年第8期1627-1631,共5页Acta Physica Sinica

基　　金：国家自然科学基金重大项目!(批准号:299925 30);北方交通大学攀登计划基金资助的课题

摘　　要：以高场作用下载流子对三角势垒的Fowler Nordheim隧穿理论为基础 ,建立了双层有机电致发光器件中载流子的输运和复合发光模型 .计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响 .该理论模型很好地解释了实验现象 ,并进一步证实了电场对复合区域的调制作用 .Based on the Fowler\|Nordheim tunneling injection, a model for carriers transport and recombination in organic bilayer devices at high electric field is presented. The influences of applied bias and interface barriers on carriers recombination and its efficiency are calculated and discussed. The theory derived from this model reasonably elucidates the experimental phenomena, and it proves that the electric field can control the carriers recombination region.

关 键 词：有机电致发光 双层器件 界面势垒 

分 类 号：TN383[电子电信—物理电子学]