直流电弧放电法合成In_2O_3纳米粒子  

Synthesis of indium oxide nanoparticles via DC arc discharge

作　　者：柳颖[1] 钱炳建[1] 张亚非[1] 

机构地区：[1]上海交通大学微纳科学技术研究院,上海200240

出　　处：《化工新型材料》2012年第7期53-54,102,共3页New Chemical Materials

基　　金：上海市科委纳米专项(1052nm02000);国家863项目(2011AA050504)

摘　　要：电弧放电法因能在瞬间产生高温使原料气化而成为一种高效的纳米材料制备方法。以金属In为原料,在无催化剂的条件下,采用直流电弧放电法直接合成了In2O3纳米粒子。XRD、SEM和TEM结果表明所制备的In2O3纳米粒子为立方结构,形貌为结晶良好的八面体,平均粒径为60～120nm。纳米粒子之间以点接触和面接触相连。Arc discharge methods can heat materials to high temperature instantly so that various nanomaterials can be synthesized. In2 O3 nanoparticles were synthesized by DC arc discharge method without catalyst using indium as raw ma- terials. XRD, SEM and TEM results showed that the as-synthesized In2O3 nanoparticles were mainly cubic structures, and the morphology were octahedron with smooth surface. The average size of the product was 60~ 120nm.

关 键 词：三氧化二铟 纳米颗粒 电弧放电 

分 类 号：TB383.1[一般工业技术—材料科学与工程]