毫米波GaN基HEMT器件材料结构发展的研究  

Development Research of the Millimeter Wave GaN-Based HEMT Device Material Structure

作　　者：张效玮[1,2] 贾科进[1] 房玉龙[2] 敦少博[2] 冯志红[2] 赵正平[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2012年第8期634-637,641,共5页Semiconductor Technology

基　　金：国家自然科学基金(60890192;60876009)

摘　　要：由于GaN材料的高的饱和电子速度和击穿场强,GaN基HEMT已经成为实现毫米波器件的重要选择。回顾了GaN基HEMT器件材料结构的发展历程,就目前GaN基毫米波HEMT器件设计应用存在的短沟道效应和源漏间较大的导通电阻两个主要问题进行了机理分析,并对GaN基HEMT器件的毫米波应用未来发展方向进行了分析。同时从GaN基HEMT器件材料结构设计入手对解决方案进行了探讨性研究。针对面向毫米波应用的GaN基HEMT材料结构,为有效的抑制短沟道效应,可以采用栅凹槽结构加背势垒结构、采用InAlN等新材料,可以有效降低源漏导通电阻。Because GaN materials of high saturated electron velocity and breakdown field strength,GaN-based high electron mobility transistor（HEMT） has become an important option for the realization millimeter wave components.Review of the GaN-based HEMT device material structure development process and analysis two main issues for currently the millimeter wave GaN-based HEMT device design application,the short channel effect and larger source-drain conduction resistance,point out its future development direction.At the same time,the solutions were investigated from the GaN-based HEMT device material structure design.In view of the application for its material structure,the conclusion show that the gate groove structure with back barrier structure can effectively inhibit short channel effect.Using InAlN and other new materials,can effectively reduce the source-drain conduction resistance.

关 键 词：镓氮高电子迁移率晶体管 器件材料结构 短沟道效应 源漏导通电阻 毫米波 

分 类 号：TN304.23[电子电信—物理电子学] TN386