A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer  

作　　者：张金平 李泽宏 张波 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Chinese Physics B》2012年第6期573-578,共6页中国物理B（英文版）

基　　金：Project supported by the National Science and Technology Major Project of China （Grant No. 2011ZX02504-003） and the Fundamental Research Funds for the Central Universities, China （Grant No. ZYGX2011J024）.

摘　　要：A novel high-voltage light punch-through（LPT） carrier stored trench bipolar transistor（CSTBT） with buried p-layer（BP） is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electric field distribution,the electric field peaks both at the junction of the p base/n-type carrier stored（N-CS） layer and the corners of the trench gates are reduced,and new electric field peaks appear at the junction of the BP layer/N drift region.As a result,the overall electric field in the N drift region is enhanced and the proposed structure improves the breakdown voltage（BV） significantly compared with the LPT CSTBT.Furthermore,the proposed structure breaks the limitation of the doping concentration of the N-CS layer（NN CS） to the BV,and hence a higher NN CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop（Vce（sat）） can be obtained with almost constant BV.The results show that with a BP layer doping concentration of NBP = 7 × 10^15 cm^-3,a thickness of LBP = 2.5 μm,and a width of WBP = 5 μm,the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V,with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.However,with the same N-drift region thickness of 150 μm and NN CS,the BV of the CSTBT decreases from 1598 V to 247 V.Meanwhile,the Vce（sat） of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.A novel high-voltage light punch-through（LPT） carrier stored trench bipolar transistor（CSTBT） with buried p-layer（BP） is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electric field distribution,the electric field peaks both at the junction of the p base/n-type carrier stored（N-CS） layer and the corners of the trench gates are reduced,and new electric field peaks appear at the junction of the BP layer/N drift region.As a result,the overall electric field in the N drift region is enhanced and the proposed structure improves the breakdown voltage（BV） significantly compared with the LPT CSTBT.Furthermore,the proposed structure breaks the limitation of the doping concentration of the N-CS layer（NN CS） to the BV,and hence a higher NN CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop（Vce（sat）） can be obtained with almost constant BV.The results show that with a BP layer doping concentration of NBP = 7 × 10^15 cm^-3,a thickness of LBP = 2.5 μm,and a width of WBP = 5 μm,the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V,with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.However,with the same N-drift region thickness of 150 μm and NN CS,the BV of the CSTBT decreases from 1598 V to 247 V.Meanwhile,the Vce（sat） of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.

关 键 词：carrier stored trench bipolar transistor light punch-through buried p-layer breakdown voltage 

分 类 号：TN322.8[电子电信—物理电子学]