Ⅲ-Ⅴ族半导体材料组成光子晶体能态密度特性  

Density states properties of photonic crystal with group Ⅲ-Ⅴ semiconductor material

作　　者：陈士芹[1] 

机构地区：[1]临沂大学实验管理中心,山东临沂276000

出　　处：《量子电子学报》2012年第4期491-494,共4页Chinese Journal of Quantum Electronics

基　　金：山东省2011年高等学校科技计划（J11LG74）

摘　　要：基于平面波展开法,以Ⅲ-Ⅴ族半导体材料AlP、AlAs、AlSb和GaP构成二维方形格子光子晶体,并对其光子晶体能态密度特性进行了数值模拟。结果表明,Ⅲ-Ⅴ族半导体材料构成二维方形格子光子晶体具有较好的光子带隙,形成的最大带隙随介电常数差值的增大而增大,f=0.2a时归一化频率达到最大光子带隙,AlSb具有较宽的光子禁带。该研究结果为光子晶体器件的研究提供了理论依据。Density states properties of two-dimension square lattice photonic crystals withⅢ-ⅤA1P,A1As, A1Sb and GaP semiconductor material were calculated by plane wave expansion method（PWM）.The results showed that they have wide photonic band gaps.The width of band gap increases gradually with the increasing of permittivity difference and gets the maximum value at f=0.2a in the normalized frequency. The data reveals among these photonic crystals,the one with AlSb has the widest band gap.All these results provide theoretic basis for the photonic crystal devices.

关 键 词：光电子学 能态密度特性 平面波展开法 半导体材料 光子晶体 

分 类 号：O431.1[机械工程—光学工程]