High-speed modified uni-traveling-carrier photodiode with a new absorber design  

作　　者：郭丽庆 黄永清 段晓峰 任晓敏 王琦 张霞 

机构地区：[1]State Key Lab of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Belting University of Posts and Telecommunications, Beifing 100876, China

出　　处：《Chinese Optics Letters》2012年第B06期178-181,共4页中国光学快报（英文版）

摘　　要：The Gaussian doping is used to optimize the performance of InP/InGaAs uni-traveling-carrier photodi ode （UTC-PD） in this letter. The UTC-PD structure is modeled with drift-diffusion approach and the comparisons of the characteristics for four UTC-PDs with different doping schemes in absorption layer are made. According to the comparison, one optimized UTC-PD where the InP collection layer is partly replaced by a depleted InGaAs using Gaussian doping on top of lightly constant background doping in the absorption layer is presented, with f3dn of 79 GHz, which is more than 1.9 times higher than that with the constant doping in the absorption layer.The Gaussian doping is used to optimize the performance of InP/InGaAs uni-traveling-carrier photodi ode （UTC-PD） in this letter. The UTC-PD structure is modeled with drift-diffusion approach and the comparisons of the characteristics for four UTC-PDs with different doping schemes in absorption layer are made. According to the comparison, one optimized UTC-PD where the InP collection layer is partly replaced by a depleted InGaAs using Gaussian doping on top of lightly constant background doping in the absorption layer is presented, with f3dn of 79 GHz, which is more than 1.9 times higher than that with the constant doping in the absorption layer.

分 类 号：TN364.2[电子电信—物理电子学] TB651[一般工业技术—制冷工程]