光抽运垂直外腔面发射激光器的增益特性数值模拟  

Numerical Simulation of the Gain Characteristics of Optically Pumped Vertical External Cavity Surface Emitting Lasers

作　　者：华玲玲[1] 杨阳[2] 宋晏蓉[3] 张鹏[4] 

机构地区：[1]华北科技学院基础部,北京101601 [2]华北科技学院计算机学院,北京101601 [3]北京工业大学应用数理学院,北京100124 [4]重庆师范大学物理与电子工程学院,重庆400047

出　　处：《中国激光》2012年第B06期20-26,共7页Chinese Journal of Lasers

基　　金：基金项目：中央高校基本科研业务费（20118020）和华北科技学院教育科学研究基金资助课题.

摘　　要：为了深入研究光抽运垂直外腔面发射激光器的增益特性，以InGaAs／OaAs应变量子阱系统为例，建立了将带隙、带边不连续性计算和带结构计算系统结合起来的完整体系，考虑在应变影响下能带及波函数的混合效应。利用有限差分法对含6×6Luttinger-Kohn哈密顿量的有效质量方程精确求解，得到了InGaAs／GaAs应变量子阱导带、价带的能带结构和包络函数，然后选用Lorentzian线形函数，数值模拟了量子阱的材料增益谱和自发辐射谱。最后讨论了阱宽、载流子浓度、温度等因素对量子阱材料增益的影响，为光抽运垂直外腔面发射激光器的优化设计提供了理论依据。To investigate the gain characteristics of optically pumped vertical external cavity surface emitting lasers, taking InGaAs/GaAs strained quantum wells as an example, a complete system model which considers M1 the effects of the band-gap, band-edge discontinuities and band structure is established. In view of the valence band mixing and the wave function mixing, the 6 X 6 effective-mass Luttinger-Kohn Hamiltonian is solved by using the finite difference method, and the conduction-band structures, obtained. And then the material gain and spontaneous the valence-band structures and envelope functions are radiation spectrum with linear Lorentzian function are simulated numerically. Finally, the effects of the well width, carrier density, temperature and other factors on the quantum-well gain are discussed. The calculated results provide a theoretical basis for the optimized design of optically pumped vertical external cavity surface emitting lasers.

关 键 词：激光器 应变量子阱 能带结构 材料增益 自发辐射谱 

分 类 号：O417[理学—理论物理]