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机构地区:[1]江南大学,无锡214122
出 处:《中国机械工程》2012年第14期1738-1741,共4页China Mechanical Engineering
基 金:国家自然科学基金资助项目(51005102);中央高校基本科研业务费专项基金资助项目(JUSRP10909);江苏省自然科学基金资助项目(BK2004020);清华大学摩擦学国家重点实验室开放基金资助项目(SKLTKF10B04)
摘 要:在UMT-2微摩擦试验机上,对单晶硅片进行了干摩擦和水润滑两种状态下的摩擦磨损试验,分析讨论了载荷和滑动速度对单晶硅片的摩擦因数和磨损率的影响规律;运用扫描电子显微镜,观察和分析了其磨损表面形貌。结果表明:干摩擦条件下的磨损机理主要表现为黏着磨损,水润滑条件下的磨损机理主要表现为机械控制化学作用下的原子/分子去除过程;水润滑条件下的摩擦因数和磨损量均较小,最小磨损率仅为10μm3/s;在水润滑条件下,载荷和滑动速度达到一定值时,硅片表面将发生摩擦化学反应,生成具有润滑作用的Si(OH)4膜,即机械作用在一定条件下对化学反应具有促进作用。The friction and wear experiments of single crystal silicon wafer under dry and water lu- brication conditions were carried out using a UMT-2 micro-friction tester. The effects of the load and sliding speed on friction coefficient and wear rate of single crystal silicon wafer were investigated. And the surface geomorphology was characterized by scanning electron microscope(SEM). It is found that the friction coefficient and wear rate under water lubrication are lower than that of frictional con- ditions, and the minimum wear rate under water lubrication is only 10μm^3/s. On one hand, the wear mechanism under dry frication is regarded to be of adhesive wear. On the other hand, the wear mechanism under water lubrication is considered to be of molecule-scale removal process for the nano scratch depth of 0.07nm. Under water lubrication condition,the tribochemical reaction in the surface of silicon wafer will occur unless the load and sliding speed reach a certain value, which leads to the formation of Si(OH)4 film with lubrication performance. It indicates that the mechanical action can
分 类 号:TG115.5[金属学及工艺—物理冶金] O484.4[金属学及工艺—金属学]
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