Fe/Al_2O_3/Fe隧道结特性分析  

STUDING ON ELECTROMAGNETIC CHARACTERS OF Fe/Al_2O_3/Fe TUNNELING JUNCTIONS

作　　者：刘存业[1] 徐庆宇[1] 倪刚[1] 桑海[1] 都有为[1] 

机构地区：[1]南京大学固体微结构国家重点实验室

出　　处：《物理学报》2000年第9期1897-1900,共4页Acta Physica Sinica

基　　金：国家 973项目基金!(批准号 :G19990 64 5 0 8)&&

摘　　要：用离子束溅射方法制备磁性隧道结 (MTJ) .研究MTJ样品的隧道结磁电阻 (TMR)效应 .用X射线光电子能谱分析了MTJ的软、硬磁层和非磁层及其界面的化学组成与微结构 .研究了MTJ的微结构对氧化铝势垒高度与有效宽度和TMR效应的影响 .Using ion\|beam\|sputtering technique, Fe/Al\-2O\-3/Fe magnetic tunneling junctions (MTJ) were fabricated. Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied. The chemical composition and the microstructural characteristics of hard\|and soft\|magnetic layers, insulating layer, and interface of MTJ were analyzed by X\|ray photoelectron spectroscopy and Atomic force microscopy. The dependence of MR effect on microstructure, chemical composition, conductance, and I V characteristic of the samples are also discussed.

关 键 词：磁性隧道结 X射线光电子能能谱 半导体 TMR 

分 类 号：O482.5[理学—固体物理]