一种消除失调电压的低温度系数带隙基准电路  

A low offset voltage and low temperature coefficient bandgap reference circuit

作　　者：于海明[1] 肖谧[1] 陈思海[1] 徐江涛[1] 姚素英[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《电子技术应用》2012年第8期46-49,共4页Application of Electronic Technique

基　　金：国家自然科学基金资助项目(61036004;61076024)

摘　　要：提出了一种利用多晶硅电阻的温度系数补偿负温度系数电压实现低温度系数的带隙基准电路,并且引入由二分频时钟控制的CMOS开关,使产生的失调电压正负交替做周期性变化相互抵消。采用BiCMOS 0.35μm工艺设计。仿真结果表明,此方法能够使MOS管在失配10%的情况下降低97%的失配,温度系数可达5.2 ppm/℃。工作电压为1.5 V～3.3 V、工作温度为-40℃～+70℃且工作在1.8 V常温下时,电路的工作电压为1.144 3 V,总电流为29.13μA,低频处的电源抑制比为-70 dB。A design of low temperature coefficient bandgap reference circuit. Use negative temperature coefficient resistor for high-temperature coefficient compensation to reduce the temperature coefficient. Join in CMOS switch controlled by two sub-frequency clock ,to compensate the error caused by the mismatch of the MOSFET. When designed by BiCMOS 0.35 μm technology, emulate result show that this method can reduce 97% mismatch when the MOSFET＇s mismatch reach to 10%. The temperature coefficient reach to 5.2 ppm/℃. The supply voltage is 1.5 V-3.3 V, the temperature range is -40 ℃～＋70 ℃. When work at 1.8 V supply voltage at normal temperature, the reference voltage is 1.144 3 V, total current is 29.13 μA, PSRR at low frequency is -70 dB.

关 键 词：带隙基准 CMOS开关 失调电压 低温度系数 

分 类 号：TN433[电子电信—微电子学与固体电子学]