A PNPN tunnel field-effect transistor with high-k gate and Iow-k fringe dielectrics  

作　　者：崔宁 梁仁荣 王敬 周卫 许军 

机构地区：[1]Tsinghua National Laboratory for Information Science and Technology,Institute of Microelectronics,Tsinghua University

出　　处：《Journal of Semiconductors》2012年第8期54-59,共6页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China(No.2011CBA00602);the National Natural Science Foundation of China(Nos.60876076,60976013,60820106001)

摘　　要：A PNPN tunnel field effect transistor（TFET） with a high-k gate dielectric and a low-k fringe dielectric is introduced.The effects of the gate and fringe electric fields on the TFET＇s performance were investigated through two-dimensional simulations.The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel,while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability.The TFET device with the proposed structure has good switching characteristics,enhanced on-state current,and high process tolerance.It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.A PNPN tunnel field effect transistor（TFET） with a high-k gate dielectric and a low-k fringe dielectric is introduced.The effects of the gate and fringe electric fields on the TFET＇s performance were investigated through two-dimensional simulations.The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel,while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability.The TFET device with the proposed structure has good switching characteristics,enhanced on-state current,and high process tolerance.It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.

关 键 词：TFET subthreshold swing high-k dielectric low-k dielectric fringe electric field 

分 类 号：TN386[电子电信—物理电子学] O441.1[理学—电磁学]