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作 者:李福球[1] 林松盛[1] 康忠明[1] 林凯生[1]
出 处:《真空》2012年第4期51-54,共4页Vacuum
摘 要:本文采用阴极电弧离子镀技术制备了ZrN膜层,研究了工作气压、偏压、弧流等工艺参数对ZrN膜层表面形貌和结构的影响,分别用扫描电镜(SEM)、X射线衍射仪(XRD)分析了膜层的表面形貌及相结构。结果表明:工作气压、偏压、弧电流等工艺参数对ZrN膜层的表面形貌有较大的影响,在本实验内适当提高N2压强、偏压以及在稳弧前提下降低弧流有利于减少大颗粒,改善ZrN膜层表面形貌,提高膜层综合性能;不同工艺参数下制备的ZrN膜层均具有典型的面心立方结构,工作气压和弧电流对ZrN膜层晶体生长方向的影响较小,偏压对晶体生长方向的影响显著,在20 V偏压下,晶体呈(200)面择优取向,继续提高偏压(100 V^300 V),晶体生长呈(111)面择优取向。ZrN thin films were deposited by cathodic arc ion plating.Scanning electron microscope,X-ray diffraction were used to investigate the morphology,phase composition of the ZrN thin films.It is shown that the surface morphology and performance of the ZrN thin films can be well improved by choosing an optimised parameter of working pressure,bias voltage and arc current.The films prepared under different process parameters exhibited typical face centered cubic structure.The grain orientation was significantly influenced by the bias voltage,ZrN films deposited at 20V exhibited(200) preferred orientation,while(111)preferred orientation was observed when the bias voltage is improved to 100V-300V.On the other hand,working pressure and arc current have less impact on the crystal structure of the ZrN films.
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