Strain relaxation and optical properties of etched In_(0.19)Ga_(0.81) N nanorod arrays on the GaN template  

作　　者：张东炎 郑新和 李雪飞 吴渊渊 王辉 王建峰 杨辉 

机构地区：[1]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences [2]Graduate University of the Chinese Academy of Sciences

出　　处：《Chinese Physics B》2012年第8期511-516,共6页中国物理B（英文版）

基　　金：Project supported by the SONY-SINANO Joint Project (Grant No. Y1AAQ11001);the Suzhou Solar Cell Research Project,China (Grant No. ZXJ0903);the International S & T Cooperation Projects (SINO-Japan);the Science Fund of the Ministry of Science and Technology of the People’s Republic of China (Grant No. 2010DFA22770)

摘　　要：InGaN/GaN epilayers, which are grown on sapphire substrates by the metal-organic chemical-vapour deposition （MOCVD） method, are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks. The formation of nanorod arrays eliminates the tilt of the InGaN （0002） crystallographic plane with respect to its GaN bulk layer. Photoluminescence results show an apparent S-shaped dependence on temperature. The light extraction efficiency and intensity of photoluminescence emission at low temperature of less than 30 K for the nanorod arrays are enhanced by the large surface area, which increases the quenching effect because of the high density of surface states for the temperature above 30 K. Additionally, a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation, which is confirmed by reciprocal space mapping measurements.InGaN/GaN epilayers, which are grown on sapphire substrates by the metal-organic chemical-vapour deposition （MOCVD） method, are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks. The formation of nanorod arrays eliminates the tilt of the InGaN （0002） crystallographic plane with respect to its GaN bulk layer. Photoluminescence results show an apparent S-shaped dependence on temperature. The light extraction efficiency and intensity of photoluminescence emission at low temperature of less than 30 K for the nanorod arrays are enhanced by the large surface area, which increases the quenching effect because of the high density of surface states for the temperature above 30 K. Additionally, a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation, which is confirmed by reciprocal space mapping measurements.

关 键 词：InGaN/GaN nanorod arrays PHOTOLUMINESCENCE strain relaxation recombination 

分 类 号：O482.3[理学—固体物理]