The influence of annealing temperature on the morphology of graphene islands  

The influence of annealing temperature on the morphology of graphene islands

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作  者:黄立 徐文焱 阙炎德 潘毅 高敏 潘理达 郭海明 王业亮 杜世萱 高鸿钧 

机构地区:[1]Nanoscale Physics and Devices Laboratory,Institute of Physics,Chinese Academy of Sciences

出  处:《Chinese Physics B》2012年第8期532-536,共5页中国物理B(英文版)

基  金:Project supported by the National Basic Research Program of China (Grant Nos. 2011CB932700,2010CB923004,2010CB923004,and 2009CB929103);the National Natural Science Foundation of China (Grant Nos. 10834011 and 60976089);the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W22)

摘  要:We report on temperature-programmed growth of graphene islands on Ru (0001) at annealing temperatures of 700 ℃, 800 ℃, and 900 ℃. The sizes of the islands each show a nonlinear increase with the annealing temperature. In 700 ℃ and 800 ℃annealings, the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate, which is in accordance with the etching growth mode. In 900 ℃ annealing, the islands are much larger and of lower quality, which represents the early stage of Smoluchowski ripening. A longer time annealing at 900 ℃ brings the islands to final equilibrium with an ordered moire pattern. Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.We report on temperature-programmed growth of graphene islands on Ru (0001) at annealing temperatures of 700 ℃, 800 ℃, and 900 ℃. The sizes of the islands each show a nonlinear increase with the annealing temperature. In 700 ℃ and 800 ℃annealings, the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate, which is in accordance with the etching growth mode. In 900 ℃ annealing, the islands are much larger and of lower quality, which represents the early stage of Smoluchowski ripening. A longer time annealing at 900 ℃ brings the islands to final equilibrium with an ordered moire pattern. Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.

关 键 词:graphene islands Ru (0001) annealing temperature scanning tunneling microscope 

分 类 号:O613.71[理学—无机化学]

 

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