Temperature and drain bias dependence of single event transient in 25-nm FinFET technology  

作　　者：秦军瑞 陈书明 李达维 梁斌 刘必慰 

机构地区：[1]College of Computer,National University of Defense Technology

出　　处：《Chinese Physics B》2012年第8期590-594,共5页中国物理B（英文版）

基　　金：Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004);the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014)

摘　　要：In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.

关 键 词：fin field-effect transistor single event transient temperature dependence drain bias dependence 

分 类 号：TN386.1[电子电信—物理电子学]