Effects of 50keV and 100keV Proton Irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells  

作　　者：王荣 冯钊 刘运宏 鲁明 

机构地区：[1]Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal University [2]College of Nuclear Science and Technology,Beijing Normal University [3]Beijing Radiation Center

出　　处：《Plasma Science and Technology》2012年第7期647-649,共3页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China(Nos.10675023,11075018);the Fundamental Research Funds for the Central Universities of China

摘　　要：GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10^10 cm^-2, 1 × 10^11 cm^-2,1 × 10^12 cm^-2, and 1 × 10^13 cm^-2. Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements, and then the changes in Isc, Voc, Pmax and the spectral response of the cells are observed as functions of proton irradiation fluence and energy. The results show that the spectral response of the top cell degrades more significantly than that of the middle cell, and 100 keV proton-induced degradation rates of Isc, Voc and Pmax are larger compared with 50 keV proton irradiation.GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10^10 cm^-2, 1 × 10^11 cm^-2,1 × 10^12 cm^-2, and 1 × 10^13 cm^-2. Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements, and then the changes in Isc, Voc, Pmax and the spectral response of the cells are observed as functions of proton irradiation fluence and energy. The results show that the spectral response of the top cell degrades more significantly than that of the middle cell, and 100 keV proton-induced degradation rates of Isc, Voc and Pmax are larger compared with 50 keV proton irradiation.

关 键 词：GaInP/GaAs/Ge solar cell proton irradiation spectral response 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN304.26[电子电信—物理电子学]