Etching Mechanisms of CF_3 Etching Fluorinated Si:Molecular Dynamics Simulation  

作　　者：赵成利 邓朝勇 孙伟中 张浚源 陈峰 贺平逆 陈旭 芶富均 

机构地区：[1]Institute of Plasma Surface Interactions,Guizhou University [2]College of science,Guizhou University [3]Key Laboratory of Radiation Physics and Technology,Ministry of Education [4]Institute of Nuclear Science and Technology,Sichuan University [5]FOM Institute for Plasma Physics,3439 MN Nieuwegein,The Netherlands

出　　处：《Plasma Science and Technology》2012年第7期670-674,共5页等离子体科学和技术（英文版）

基　　金：supported financially by Guizhou Province of China(No.700968101);International Thermonuclear Experimental Reactor(ITER) program special(No.2009GB104006)

摘　　要：Molecular dynamics simulations are performed to investigate CF3 continuously bom- barding the amorphous silicon surface with energies of 10 eV, 50 eV, 100 eV and 150 eV at normal incidence and room temperature. The improved Tersoff-Brenner potentials were used. The simulation results show that the steady-state etching rates are about 0.019, 0.085 and 0.1701 for 50 eV, 100 eV and 150 eV, respectively. With increasing incident energy, a transition from C-rich surface to F-rich surface is observed. In the region modified by CF3, SiF and CF species are dominant.Molecular dynamics simulations are performed to investigate CF3 continuously bom- barding the amorphous silicon surface with energies of 10 eV, 50 eV, 100 eV and 150 eV at normal incidence and room temperature. The improved Tersoff-Brenner potentials were used. The simulation results show that the steady-state etching rates are about 0.019, 0.085 and 0.1701 for 50 eV, 100 eV and 150 eV, respectively. With increasing incident energy, a transition from C-rich surface to F-rich surface is observed. In the region modified by CF3, SiF and CF species are dominant.

关 键 词：molecular dynamics simulation amorphous silicon incident energy 

分 类 号：O539[理学—等离子体物理] TN305[理学—物理]