氮硅配施对夏玉米抗倒性和产量的影响  

Effect of Nitrogen Application Combined with Silicon on the Lodging-resistance and the Yield of Summer Corn

作　　者：张月玲[1] 王宜伦[1] 谭金芳[1] 韩燕来[1] 

机构地区：[1]河南农业大学资源与环境学院/河南省高校农业资源利用工程技术研究中心,郑州450002

出　　处：《玉米科学》2012年第4期122-125,共4页Journal of Maize Sciences

基　　金：国家科技支撑计划(2008BADA4B07)

摘　　要：试验采用N、Si（3×2）完全均衡方案和田间裂区设计,氮肥设120 kg/hm2（N1）、180 kg/hm2（N2）、240 kg/hm2（N3）3个水平,硅（SiO2）设0、75 kg/hm2两个水平,研究氮硅配施对夏玉米抗倒性和产量的影响。结果表明,施氮量为120-240 kg/hm2,玉米平均株高、茎粗、茎皮厚、室内横折强度、田间抗拉弯强度、穗长、穗粗、穗粒数、百粒重、理论产量和实际产量均随施氮量的增加而提高,不同施氮水平间上述各指标均达极显著差异（P〈0.01）。氮硅配施对玉米茎粗、茎皮厚、室内横折强度和田间抗拉弯强度影响的交互效应达显著水平（P〈0.05）,N1、N2水平下,施硅与不施硅处理相比茎粗、茎皮厚、室内横折强度、田间抗拉弯强度差异达显著水平;N3水平下,除室内横折强度达显著水平外,其他各指标差异均不显著。氮硅配施对玉米穗长、穗粗、穗粒数、百粒重、理论产量和实际产量影响的交互效应亦达显著或极显著水平,N1、N2水平下,施硅与不施硅处理相比穗长、穗粒数、理论产量、实际产量差异达显著水平;N3水平下,各指标差异不显著。Field experiment was conducted under three nitrogen levels of 120 kg/ha（N1）,180 kg/ha（N2） and 240 kg/ha（N3）,two silicon（SiO2） levels of 0 kg/ha and 75 kg/ha and with split-plot design to investigate the effect of nitrogen application combined with silicon on lodging-resistance and yield of summer corn.The results showed that with the increase of nitrogen application rate from 120 to 240 kg/ha,the plant height,stem diameter,bark thickness,cross-breaking strength and tensile strength,spike length,spike diameter,kernel number,100-grain weight,theoretic yield and actual yield increased significantly（P〈0.01）.The interactive effects of nitrogen and silicon on the stem diameter,bark thickness,cross-breaking strength and tensile strength were significant（P〈0.05）,the indexes above show significant difference（P〈0.05） between ＋Si and-Si treat under N1 and N2 levels but not under N3.The interactive effects of nitrogen and silicon on the spike length,spike diameter,kernel number,100-grain weight,theoretic yield and actual yield were also notable（P〈0.05 or P〈0.01）,the indexes above show significant difference（P〈0.05） between ＋Si and-Si treat under N1 and N2 levels but not under N3.

关 键 词：夏玉米 氮硅配施 抗倒性 产量 

分 类 号：S513.062[农业科学—作物学]