常压下金催化硅纳米线生长实验研究  

Study on the Growth of Silicon Nanowires under Atmosphere Pressure

作　　者：于蕾[1] 凌晨晓骥[1] 马昕瑶[1] 闫帅[1] 崔益民[1] 

机构地区：[1]北京航空航天大学,北京100191

出　　处：《大学物理实验》2012年第3期1-4,13,共5页Physical Experiment of College

基　　金：北京市国家大学生创新性实验计划(101000631)

摘　　要：采用固-液-固(SLS)生长机制,研究常压下金催化硅纳米线的制备方法。实验中将硅基Au薄膜在氩氢气中退火,退火温度为1 050℃和1 080℃,退火完成后在扫描电镜下观察硅片表面的形貌变化,分析不同退火温度、通气量和金膜厚度下的实验结果,并在此基础上进一步讨论了各变量对硅纳米线的生长影响及其机理。In this paper, using solid-liquid-solid （SLS） growth mechanism, Si nanowires were fabricated on Si substrates by Au catalyst under atmosphere pressure. In the experiments, the Si substrates with different thick Au films are heated at 1050℃ and 1080℃ under flowing Ar/H2 mixing gas,respective- ly. Nanowires with different length and diameter are inspected by SEM, effects of processing variables such as temperature, flowing gas velocity, Au film thickness are investigated, and the effects to growth mechanism are analyzed.

关 键 词：硅纳米线 常压 SLS生长机制 

分 类 号：TB383[一般工业技术—材料科学与工程]