红色Bi_4Ge_3O_(12)晶体在低温下的发光性能  

Luminescence of Red Bi_4Ge_3O_(12) Crystal in Low Temperature

作　　者：俞平胜[1] 苏良碧[2] 王庆国[2] 徐军[2] 

机构地区：[1]盐城工学院材料工程学院,江苏盐城224051 [2]中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室,上海201800

出　　处：《发光学报》2012年第8期828-832,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61078053)资助项目

摘　　要：用下降法制备了Bi4Ge3O12晶体,发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi4Ge3O12晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi4Ge3O12在1 150 nm等波长处有较强的发射峰,强度随温度降低而增强,衰减时间为几百μs。Red Bi4Ge3O12（BGO） single crystals had been grown by vertical Bridgman（VB） method.The luminescence and decay time in the near infrared（NIR） region were measured at temperature of 8 K.A broad emission band was found at around 1 150 nm at T〈200 K,and the luminescence lifetime was measured to be several hundred microseconds.The decreased temperature led to increased luminescence intensity.

关 键 词：红色Bi4Ge3O12 低温 发光 

分 类 号：O482.31[理学—固体物理]