一种高性能BiCMOS差分参考电压源  

High performance BiCMOS differential reference voltage generator

作　　者：赵磊[1] 杨银堂[1] 朱樟明[1] 刘帘曦[1] 

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071

出　　处：《西安电子科技大学学报》2012年第4期11-16,共6页Journal of Xidian University

基　　金：国家自然科学基金资助项目(60725415;60971066;61006028);国家863资助项目(2009AA01Z258);陕西省重大技术创新专项(2009ZKC02-11)

摘　　要：采用电流求和结构,提出了一种高性能BiCMOS差分参考电压源,引入零反馈补偿技术有效提高了差分参考电压的电源抑制比,电流求和温度补偿技术保证了差分参考电压的高精度、低温漂.基于ASMC0.35μm 3.3VBiCMOS工艺的仿真和测试结果表明,在低频和100MHz时,参考差分电压对电源噪声抑制比为78.1dB和66.7dB,对地线噪声抑制比为72.4dB和63.8dB,输出差分参考电压的平均温度系数为11×10-6/℃,有效芯片面积为2.2mm2,功耗小于15mW,可应用于14位100MHz流水线模/数转换中.A high performance BiCMOS differential reference voltage generator with a current summing architecture is presented. The power supply rejection ratio （PSRR） is improved by using feedback-zero compensation. A high precision and low temperature drift are attained in the current summing temperature compensation mode. In the ASMC 0. 35 μm 3.3 V BiCMOS process, the differential reference voltage generator is simulated and tested below： At a low frequency and at 100MHz, the positive power supply rejection ratio （PSRR＋ ） is 78. I dB and 66.7 dB, respectively, the negative power supply rejection ratio （PSRR-） is 72.4 dB and 63.8dB, respectively, the average temperature coefficient of the output differential reference voltage is 11× 10^-6/℃, the active area is 2. 2 mm^2, and the power eomsumption is less than 15 roW. This proposed differential reference voltage generator can be applied in a 14 bit 100 MHz pipeline ADC.

关 键 词：带隙基准源 零反馈补偿 BICMOS 差分参考电压 

分 类 号：TN433[电子电信—微电子学与固体电子学]