SiGe HBT超宽带低噪声放大器设计  

Design of a SiGe HBT Low Noise Amplifier

作　　者：张滨[1] 杨银堂[1] 李跃进[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《微波学报》2012年第4期76-80,共5页Journal of Microwaves

基　　金：国家自然科学基金(60725415)

摘　　要：采用ADS软件设计并仿真了一种应用于UWB标准的低噪声放大器。该低噪声放大器基于JAZZ 0.35μmSiGe工艺,工作带宽为3.1～10.6GHz。电路的输入极采用共发射极结构,利用反馈电感来进行输入匹配,第二级采用达林顿结构对信号提供合适的增益。使用ADS2006软件进行设计、优化和仿真。仿真结果显示,在3.1～10.6GHz带宽内,放大器的电源电压在3.3V时,噪声系数低于2.5dB,增益大于24dB,功耗为28mV,输出三阶交调为17dBm。Design of a 3.1-10.6GHz LNA using JAZZ 0.35μm SiGe process for UWB. Common emitter structure was used in the input stage which leads to better input matching. Darlongton structure was designed as the second stage which provides high gain for the circuit. Simulation and optimization of LNA have been done by ADS2006. Results show noise fig-ure of the amplifier is below 2.5dB under working voltage of 3.3V in 3.1-10.6GHz, gain is greater than 24dB, power con-sumption is 28mW, OIP3 is 17dBm.

关 键 词：锗硅异质结晶体管 低噪声放大器 增益 噪声系数 

分 类 号：TN722.3[电子电信—电路与系统]