单晶炉密闭式热场改造研究  

Research on Improved of Closed Heat Zone of the CZ Single Crystal Crower

作　　者：谢俊启[1] 韩焕鹏[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2012年第8期7-10,共4页Equipment for Electronic Products Manufacturing

摘　　要：在CG6000型单晶炉原350 mm(14英寸)敞开式热场上添加具有保温和导流作用的热屏装置,并改进计算机自动控制参数,解决了原敞开式热场下硅单晶拉制过程中产生扭曲变形的问题,生长出了外形完好,高质量的<111>晶向75～80 mm(3英寸和4英寸)硅单晶。同时对敞开式热场下硅单晶棒体扭曲变形的原因及热屏装置对硅单晶生长区域温度分布和温度梯度的影响进行了分析和探讨。In this paper wo found a good solution to improve the problem of twist and distortion during the process of silicon crystal growth by designing and introducing the heat shield to the opened heat system in the CG6000 cystal grower ,We also developed the parameter of the program to automatic control the process of crystal growth. We got 3 and 4 inchs 〈111〉 orientation silicon crystal without twist and distortion problem.Then we researched and analysed the reasons of twist and distortion problems ,finally we analysed the differents in temperature distribution and temperature gradient between opened heat system and closed heat system.

关 键 词：单晶炉 热屏装置 密闭式热场 棒体扭曲变形 

分 类 号：TN304.12[电子电信—物理电子学] TN304.053