S波段3GW相对论速调管放大器的设计  

Theoretical design of 3 GW S-band relativistic klystron amplifier

作　　者：陈永东[1,2,3] 金晓[2] 李正红[2] 吴洋[4] 黄华[2] 

机构地区：[1]中国工程物理研究院研究生部,北京100086 [2]中国工程物理研究院应用电子学研究所高功率微波重点实验室,四川绵阳621900 [3]四川理工学院,四川自贡643000 [4]清华大学,北京100084

出　　处：《强激光与粒子束》2012年第9期2151-2154,共4页High Power Laser and Particle Beams

摘　　要：利用速调管放大器中间腔可以提高器件放大增益,并达到降低微波注入功率的要求,同时针对高功率微波相对论速调管放大器的特点,建立了一个带有两个中间腔的S波段相对论速调管放大器,采用特殊结构克服了多个中间腔引入的高次模影响,模拟上实现了在kW量级微波注入条件下,基波电流调制深度达到80%,输出微波3.3GW。The introduction of bunching cavities can significantly increase the gain of relativistic klystron amplifier, and correspondingly the power of the seeding microwave can be reduced to a very low level. Though higher gain can be obtained with more bunching cavities, the self-exciting problem will seriously disturb the working mode in the device. A special structure is introduced to deal with such problem. Based on the engineering requirement, a S-band of 3 GW relativistic klystron amplifier is designed with the seeding power 20 kW. In the simulation, the fundamental current modulation depth is 80% and the output microwave power reaches 3.3 GW with the seeding power of kilowatts.

关 键 词：高功率微波 相对论速调管放大器 高增益 粒子模拟 

分 类 号：TN62[电子电信—电路与系统]